Dependence of volume fraction of clusters on deposition rate of a-Si:H films deposited using a multi-hollow discharge plasma CVD method

We have studied dependence of volume fraction of clusters in a-Si:H films on deposition rate of the films using a multi-hollow discharge plasma CVD method The maximum deposition rate realized for each pressure exponentially increases from 0.014 nm/s to 0.96 nm/s with decreasing pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters slightly increases with increasing the deposition rate, suggesting that highly stable a-Si:H films can be deposited at a high rate by using the multi-hollow discharge plasma CVD method.